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Product Detailed Parameters
- Description：IGBT 1200V 35A TO-263AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 15A
- Power - Max：164 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The HGT1S15N120C3S is a single N-channel Insulated-Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a TO-263AB surface-mount package and supports a collector-emitter voltage of 1200 V with a continuous collector current rating of 35 A. The device dissipates up to 164 W of power and exhibits a gate charge of 100 nC. Designed for high-power applications, it operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- High-voltage insulation capability suitable for demanding power switching environments
- Surface-mount construction facilitating automated assembly processes
- Robust thermal performance enabling operation at elevated temperatures
Applications
- Industrial motor drive systems
- High-frequency power conversion circuits
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the manufacturer designation as Harris Corporation or its successor entities, such as Microsemi or ON Semiconductor, due to historical corporate acquisitions in the semiconductor sector. Confirm that the TO-263AB package dimensions align with specific PCB footprint requirements. Ensure the component meets relevant safety and environmental compliance standards required for the target application.
Selection Notes
Select this IGBT when a 1200 V blocking voltage and 35 A continuous current are necessary within a compact surface-mount form factor. Consider the 164 W power dissipation limit and thermal management needs for the specific operating environment. Evaluate the 100 nC gate charge against the driving circuit capabilities to ensure efficient switching performance without excessive drive current demands.
Part Context
This component belongs to the discrete semiconductor category, specifically insulated-gate bipolar transistors. Harris Corporation historically specialized in high-performance electronic components before industry consolidation. The HGT series represents a line of robust power devices designed for industrial and commercial applications requiring reliable high-voltage switching.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to variations in internal architecture and electrical characteristics among different manufacturers' IGBTs, direct cross-referencing requires access to specific competitor datasheets and detailed parameter matching.
