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The HGT1S20N35F3VLR4505 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a voltage rating of 350V and a continuous collector current capacity of 40A. The device utilizes Ultra Fast Switching (UFS) technology to optimize performance in high-frequency applications. Packaged in the UFS form factor, this component is designed for robust operation within industrial power electronics systems.
Verify manufacturer lineage as Harris Corporation assets are integrated into L3Harris Technologies. Confirm specific package markings and date codes against original datasheets. Ensure compatibility with existing thermal management solutions due to the 40A current rating. Check for RoHS compliance status variations across production batches.
Select this component for applications requiring 350V blocking voltage and 40A continuous current. The UFS characteristic makes it suitable for high-frequency switching environments. Evaluate thermal resistance requirements based on the UFS package type. Compare against standard IGBTs if faster switching speeds are critical for system efficiency.
Harris Corporation was a prominent American technology company specializing in defense and information technology before merging with L3 Technologies in 2019 to form L3Harris Technologies. The semiconductor division's product lines, including discrete power devices like this IGBT, were absorbed into the broader portfolio of the merged entity.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with HGTP20N35F3ULR3935 only if electrical parameters align, though no official substitution data is confirmed.