HGT1S20N60B3S

$2.57

Description：IGBT 600V 40A TO-263AB
Series：-

SKU:285d883d8c1c Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-263AB
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB
Grade：-
Qualification：-

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HGT1S20N60B3S

Overview

The HGT1S20N60B3S is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It belongs to the UFS Series and features a TO-247 package for through-hole mounting. The device provides a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 27 A at 25°C. Key electrical parameters include a typical on-state voltage drop of 2.2 V at 27 A, a gate threshold voltage range of 3 V to 5 V, and a maximum switching frequency capability suitable for switch-mode power supply applications.

Feature Summary

Combines MOSFET input impedance with bipolar transistor low conduction loss
Optimized for high-frequency operation in switch-mode power supplies
Features robust short-circuit withstand capability

Applications

High-frequency switch-mode power supplies
Motor control inverters
Induction heating systems

Procurement Notes

Verify manufacturer authenticity as Harris Corporation assets were acquired by Fairchild Semiconductor. Confirm RoHS compliance status for specific production lots. Ensure ordering suffix matches required packaging configuration. Validate datasheet revision against current technical specifications before integration.

Selection Notes

Select based on 600V blocking voltage and 27A continuous current requirements. Consider thermal management due to 2.2V saturation voltage. Verify gate drive compatibility with specified threshold voltages. Evaluate switching speed requirements against typical fall time characteristics for efficiency optimization.

Part Context

This component is part of the UFS Series from Harris Corporation, later continued under Fairchild Semiconductor. It represents a generation of high-voltage IGBTs designed for efficient power conversion. The series emphasizes low conduction losses and high-frequency performance for industrial and consumer power electronics.

Replacement Considerations

Equivalent parts include HGTG20N60A4 and HGTG12N60B3. Verify pinout compatibility and thermal resistance values. Check if updated Fairchild variants offer improved switching characteristics or enhanced ruggedness for specific application loads.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.