HGT1S20N60C3R

HGT1S20N60C3R

$1.65
  • Description:IGBT 600V 40A TO-262
  • Series:-

SKU:b16328774059 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT 600V 40A TO-262
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 20A
  • Power - Max:164 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:116 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262 (I2PAK)
  • Grade:-
  • Qualification:-

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HGT1S20N60C3R

Overview

The HGT1S20N60C3R is a rugged 600V insulated gate bipolar transistor (IGBT) introduced by Harris Semiconductor. Designed for ultrafast switching applications, this component enables motor-controlled designers to replace conventional power transistors with IGBTs to maximize efficiency. It belongs to a series that includes variants such as the HGT1S20N60C3RS and HGTP20N60C3R.

Feature Summary

  • Ultrafast switching capability designed for high-frequency operation.

Applications

  • Motor control systems requiring efficient power switching.

Part Context

This component is part of Harris Semiconductor's series of ultrafast switching IGBTs. The product line also includes the HGT1S20N60C3RS and HGTP20N60C3R models, which share similar design objectives for maximizing efficiency in power electronics applications.

HGT1S20N60C3RHGT1S20N60C3R
$1.65
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