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Product Detailed Parameters
- Description：IGBT 600V 45A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 20A
- Power - Max：164 W
- Switching Energy：295µJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：91 nC
- Td (on/off) @ 25°C：28ns/151ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S20N60C3S9A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi's UFS Series, housed in a TO-263AB-3 surface-mount package. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 20A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.8V and a power dissipation capacity of 75W. Operating within a temperature range of -40°C to +150°C, it integrates an anti-parallel ultrafast diode for efficient switching applications.
Feature Summary
- Integrates an anti-parallel ultrafast recovery diode with the IGBT chip
- Utilizes Ultra Fast Soft (UFS) technology for reduced electromagnetic interference
- Designed for rugged performance in high-voltage switching environments
Applications
- High-frequency switch-mode power supplies
- Motor control drives
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized distributors or manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and specific ordering suffixes against official datasheets before procurement. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during installation.
Selection Notes
Select this component for designs requiring a 600V rated IGBT with integrated freewheeling capability in a compact surface-mount form factor. Evaluate thermal management requirements based on the 75W power dissipation limit and ensure gate drive voltages remain within the specified ±20V range for reliable operation.
Part Context
This part belongs to onsemi's UFS Series of IGBTs, which are engineered for high-efficiency power conversion. The series combines low conduction losses with fast switching characteristics, making it suitable for modern power electronics where size and thermal performance are critical design constraints.
Replacement Considerations
Direct replacements include HGTP20N60C3D and HGT20N60C3D from the same manufacturer family. Verify pinout compatibility and electrical parameters such as Vceo and Ic when substituting with equivalent parts from other vendors.
