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Product Detailed Parameters
- Description：IGBT NPT 1200V 13A TO-262
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 2.6A
- Power - Max：104 W
- Switching Energy：96µJ (on), 355µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：25ns/205ns
- Test Condition：960V, 2.6A, 51Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262
- Grade：-
- Qualification：-
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Overview
The HGT1S2N120CN is a Non-Punch Through (NPT) N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It belongs to the MOS gated high voltage switching IGBT family, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device is designed for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Feature Summary
- Non-Punch Through (NPT) design for robust high-voltage performance
- Low conduction loss characteristics suitable for efficient power switching
- Avalanche rated capability for enhanced ruggedness
- Short circuit rating providing protection against fault conditions
Applications
- AC and DC motor controls
- Power supplies and drivers for solenoids
- Drivers for relays and contactors
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability from legacy stock or third-party suppliers. Confirm RoHS compliance status and specific manufacturing date codes relevant to your quality requirements. Ensure proper handling procedures are followed as the device is sensitive to electrostatic discharge during storage and installation.
Selection Notes
Select this component for applications requiring moderate frequency switching with emphasis on minimizing conduction losses. Evaluate thermal management requirements based on the device's junction temperature limits and thermal impedance characteristics. Consider the avalanche rating and short circuit withstand capability when designing circuits subject to transient overloads or inductive load switching stresses.
Part Context
This IGBT is part of Fairchild's NPT series, which integrates MOS gate technology with bipolar conduction properties. The series is engineered for high voltage switching environments, offering a balance between switching speed and conduction efficiency. It serves as a key component in power electronics systems demanding reliable operation under high voltage stress.
Replacement Considerations
Direct substitutes include the HGTG11N120CN and HGTP11N120CN from the same NPT series. Verify pinout compatibility and electrical parameter alignment before substitution.
