HGT1S7N60A4DS

Overview

The HGT1S7N60A4DS is a 600V, 34A N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel hyperfast diode. It utilizes the TA49331 IGBT and TA49370 diode development types to provide low conduction losses and high-frequency switching capabilities. Designed for switch mode power supplies, it operates at frequencies exceeding 100kHz at 390V and 7A. The device features a TO-263AB surface-mount package with a collector flange. Key electrical parameters include a maximum collector-emitter voltage of 600V, a continuous collector current of 34A at 25°C case temperature, and a total power dissipation of 125W. The saturation voltage is typically 1.9V at 25°C and 7A.

Feature Summary

• Optimized for high-frequency operation in switch mode power supply applications
• Combines MOSFET input impedance with bipolar transistor low on-state conduction loss
• Integrated anti-parallel hyperfast diode for efficient commutation
• Temperature compensating SABER model available for circuit simulation

Applications

• High frequency switch mode power supplies
• High voltage switching circuits requiring low conduction losses
• Inverter and converter topologies operating above 100kHz

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix 'DS' corresponds to the TO-263AB surface mount package variant. Check for RoHS compliance status and ensure handling precautions are followed due to electrostatic discharge sensitivity inherent to gate-insulated devices.

Selection Notes

Select this component when designing circuits requiring 600V blocking capability with moderate current ratings around 34A. Ensure thermal management strategies account for the 125W power dissipation limit and the 1.0°C/W junction-to-case thermal resistance. Verify that the gate drive voltage does not exceed ±20V continuous to prevent oxide layer damage.

Part Context

This part belongs to the Fairchild Semiconductor SMPS Series N-Channel IGBT family, which also includes the TO-247 (HGTG7N60A4D) and TO-220AB (HGTP7N60A4D) variants. All three share identical electrical characteristics but differ in packaging. The datasheet indicates these devices were formerly developmental types TA49333.

Replacement Considerations

Direct pin-compatible replacements within the same series include HGTG7N60A4D and HGTP7N60A4D, provided the PCB layout supports the respective TO-247 or TO-220AB packages. For tape and reel packaging of the TO-263AB form factor, the suffix 9A can be added to obtain HGT1S7N60A4DS9A.