SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Fairchild Semiconductor HGT1S7N60C3D is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25 °C. The device utilizes TO-263AB surface-mount packaging with three terminals. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a maximum gate-emitter voltage of ±20 V, and a power dissipation rating of 60 W. The component operates within a temperature range of -40 °C to +150 °C.
Verify the specific suffix against official documentation, as variations may exist. Confirm RoHS compliance status through manufacturer datasheets or authorized distributors. Ensure the TO-263AB package footprint matches the target PCB design requirements before procurement.
Select this component for designs requiring fast switching speeds and integrated freewheeling diodes in surface-mount layouts. Compare the 14 A current rating and 60 W thermal dissipation against the application's peak load and cooling capabilities. Evaluate the 1.6 V saturation voltage impact on overall system efficiency.
This IGBT belongs to Fairchild's UFS Series, which emphasizes high-speed switching performance. The series targets applications demanding rapid transition times and low switching losses. The integration of an anti-parallel diode simplifies circuit topology by eliminating the need for external components in many configurations.
Cross-reference with other UFS Series variants such as HGT1S12N60C3DRS9A for higher current requirements. Verify pinout compatibility and thermal resistance values when substituting with similar TO-263 packages from other manufacturers.