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Product Detailed Parameters
- Description：IGBT 600V 14A TO-263AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：165µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：23 nC
- Td (on/off) @ 25°C：-
- Test Condition：480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The HGT1S7N60C3DS is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Harris Corporation. It belongs to the UFS Series and features an integrated ultrafast anti-parallel diode. The device is housed in a TO-263AB (D2PAK) surface-mount package with three leads. Key electrical parameters include a collector-emitter breakdown voltage of 600 V and a continuous collector current of 14 A at 25°C. The saturation voltage is specified at 1.6 V, with a maximum power dissipation of 60 W. Operating temperatures range from -40°C to +150°C junction temperature.
Feature Summary
- Integrates an ultrafast recovery anti-parallel diode for efficient commutation
- Designed for high-voltage switching applications with rugged performance
- Utilizes surface-mount D2PAK packaging for automated assembly
Applications
- High-frequency switch-mode power supplies
- Motor control inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify component authenticity through authorized distributors or manufacturer channels due to potential counterfeits. Confirm RoHS compliance status via official datasheets as regulatory requirements vary by region. Check for obsolescence notices or lifecycle changes before finalizing procurement plans.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 14A. Ensure thermal management solutions support the 60W dissipation rating within the specified operating temperature range. Compare gate charge characteristics against driver capabilities to optimize switching losses.
Part Context
This IGBT is part of the HGT series produced by onsemi, which acquired Harris Semiconductor's discrete power product line. The HGTG12N60C3D and HGTP12N60C3D are related variants in the same family but differ in package type and current ratings. The HGT1S7N60C3DS specifically denotes the surface-mount D2PAK version with 14A rating.
Replacement Considerations
Direct substitutes may include HGT1S7N60C3DR from Fairchild/ON Semi. Verify pinout compatibility and electrical parameters such as Vce(sat) and diode recovery time when cross-referencing with other manufacturers' offerings.
