HGT1S7N60C3DS9A

$1.93

Description：IGBT 600V 14A TO-263AB
Series：-

SKU:d9b48027e44f Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 14A TO-263AB
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：14 A
Current - Collector Pulsed (Icm)：56 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
Power - Max：60 W
Switching Energy：165µJ (on), 600µJ (off)
Input Type：Standard
Gate Charge：23 nC
Td (on/off) @ 25°C：-
Test Condition：480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)：37 ns
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB
Grade：-
Qualification：-

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HGT1S7N60C3DS9A

Overview

The HGT1S7N60C3DS9A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, belonging to the UFS Series. It utilizes silicon technology and is housed in a TO-263AB-3 surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 14 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 60 W. The component operates within a temperature range of -40 °C to +150 °C.

Feature Summary

Single IGBT configuration with ultrafast switching characteristics
Surface-mount installation style for automated assembly
Integrated anti-parallel diode functionality

Applications

High-frequency power conversion circuits
Motor drive systems requiring rugged switching performance
Industrial inverter topologies

Procurement Notes

This component is identified as obsolete or end-of-life. Availability is restricted, and it may not be sold in all regions. Verification of current stock status and lifecycle stage through official manufacturer channels or authorized distributors is required before design inclusion. Sourcing should prioritize verified legacy inventory sources.

Selection Notes

Select this part for applications requiring a 600V, 14A single IGBT in a TO-263AB-3 package. Ensure thermal management designs accommodate the 60 W power dissipation limit. Verify that the driving circuitry supports the specified ±20 V gate-emitter voltage limits and that the system frequency aligns with the ultrafast series specifications.

Part Context

The HGT1S7N60C3DS9A is part of onsemi's UFS Series, which focuses on rugged, high-speed switching performance. This specific model represents a single-chip solution integrating an IGBT and an anti-parallel diode, designed for compact power electronics layouts where space efficiency and switching speed are critical constraints.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's obsolescence notices or cross-reference tools for equivalent devices within the same voltage and current ratings.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.