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The HGTD3N60A4S is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's SMPS Series. It integrates an anti-parallel hyperfast diode, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. Designed for fast switching applications, it features a typical fall time of 58ns at TJ = 125°C and a saturation voltage of 1.8V @ IC = 3A. The device is housed in a TO-247 package suitable for through-hole mounting.
Verify the specific suffix 'S' against the manufacturer datasheet to confirm pinout or thermal pad variations. Ensure the component matches the original design specifications regarding the integrated diode and switching speed requirements before finalizing procurement.
Select this IGBT for designs requiring low conduction losses and fast switching speeds in high voltage environments. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling diodes in inductive load applications.
This component belongs to Fairchild's SMPS Series, which focuses on optimizing IGBTs for switch-mode power supplies and general high-frequency inverters. It shares family traits like low VCE(sat) but offers distinct integration compared to standard single IGBTs.
The HGTG30N60A4D is a similar part within the same series featuring an integrated diode. Verify current ratings and package compatibility when considering substitutes.