HGTD3N60B3S

Overview

The HGTD3N60B3S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS series, manufactured by Harris Corporation. It features an integrated anti-parallel hyperfast diode and utilizes TO-247 packaging for through-hole mounting. The device supports a collector-emitter voltage of 600V and a continuous collector current of 3A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20V, a typical fall time of 90ns at 150°C junction temperature, and a short-circuit rating capability. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Combines high input impedance MOSFET gate drive with low on-state conduction loss bipolar characteristics
• Integrates a hyperfast anti-parallel diode for efficient switching applications
• Features stable on-state voltage drop performance across wide operating temperatures
• Includes short-circuit ruggedness and defined switching SOA capability

Applications

• High-frequency power switching circuits
• Motor control drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify manufacturing origin as Harris Corporation or successor entities like Intersil/Fairchild due to corporate acquisitions. Confirm RoHS compliance status via official datasheets, as legacy parts may vary. Check for obsolescence notices or last-time buy notifications from authorized distributors. Ensure sourcing channels provide genuine components with traceable documentation.

Selection Notes

Select this component for applications requiring moderate current handling up to 3A with fast recovery characteristics. Compare saturation voltage and switching speed against modern alternatives if system efficiency is critical. Verify thermal management requirements align with the TO-247 package dissipation capabilities. Ensure gate drive voltage limits remain within the specified ±20V range for reliable operation.

Part Context

This IGBT belongs to the UFS (Ultra Fast Switching) series, designed for high-efficiency power conversion. Harris Corporation was a primary manufacturer before its semiconductor division transitions through Intersil to Fairchild Semiconductor and subsequently onsemi. The part number indicates specific pinout and thermal characteristics distinct from other series members.

Replacement Considerations

Equivalent parts include HGTG30N60B3D for higher current capacity in similar packages. For direct functional replacement, verify pin compatibility and electrical ratings against HGTGxxxxx series devices from Fairchild or onsemi. Consider modern equivalents with lower saturation voltages if available.