HGTD3N60B3S9A

Overview

The HGTD3N60B3S9A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features an integrated anti-parallel ultrafast recovery diode and is housed in a TO-263AB surface-mount package. The device supports a collector-emitter voltage of 600V and a continuous collector current of 15A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.4V, a gate-emitter threshold voltage range of 2V to 4V, and a typical turn-off time of 180ns. The component is rated for a power dissipation of 75W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates a rugged N-channel IGBT with an anti-parallel ultrafast recovery diode for efficient switching applications.
• Features low conduction loss characteristics due to optimized on-state voltage drop.
• Designed for high-voltage switching with robust short-circuit capability.

Applications

• High-frequency switch-mode power supplies
• Motor control circuits
• DC-DC converters

Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Fairchild Semiconductor, which was subsequently acquired by ON Semiconductor. Ensure the datasheet corresponds to the specific legacy Harris part number rather than a modern equivalent from the successor companies. Confirm RoHS compliance status and exact pinout compatibility if replacing existing designs.

Selection Notes

Select this component when a surface-mount solution is required for medium-power 600V switching applications. Compare the 15A current rating and 2.4V saturation voltage against system requirements. Consider the TO-263AB package thermal performance and ensure adequate heatsinking or PCB copper area is available to manage the 75W power dissipation rating effectively under operating conditions.

Part Context

This device belongs to the UFS (Ultra Fast Switching) series of IGBTs developed by Harris Corporation. These components were designed to combine the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. The series typically includes variants with different current ratings and packaging options to suit various industrial and consumer electronics needs.

Replacement Considerations

Potential substitutes include the HGTG15N60B3D or HGTG15N60C3D from Fairchild/ON Semi, which share similar electrical specifications and package types. Verify that any replacement maintains the same pinout configuration and reverse recovery characteristics of the integrated diode.