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Product Detailed Parameters
- Description：IGBT 600V 6A IPAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 3A
- Power - Max：33 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.8 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：10 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK
- Grade：-
- Qualification：-
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Overview
The HGTD3N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, part of the UFS series. It features a TO-220AB package with through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 6 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 40 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Combines high input impedance of MOSFETs with low on-state conduction loss of bipolar transistors
- Optimized for high-frequency switch mode power supply applications
- Features stable on-state voltage drop characteristics across wide temperature ranges
Applications
- High frequency switch mode power supplies
- High voltage switching circuits
- Motor control applications
Procurement Notes
Verify component authenticity due to potential legacy status. Confirm datasheet revisions match design requirements. Check for RoHS compliance if required by target market regulations. Validate pinout compatibility during integration. Ensure storage conditions prevent moisture damage prior to soldering.
Selection Notes
Select based on 600V blocking capability and 6A current rating. Consider thermal management for 40W dissipation in TO-220 package. Evaluate switching speed requirements against typical fall time specifications. Compare with newer equivalents if long-term availability is critical.
Part Context
This IGBT belongs to the UFS series designed for efficient power conversion. It integrates MOS gate drive with bipolar output characteristics. The device targets applications requiring moderate current handling with low conduction losses at high frequencies.
Replacement Considerations
HGTD7N60C3 offers higher current capacity within the same series. HGTG12N60B3 provides increased current rating in a similar package. Verify pinout and thermal characteristics before substitution.
