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Product Detailed Parameters
- Description：IGBT 600V 14A IPAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：160µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：26ns/130ns
- Test Condition：480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK
- Grade：-
- Qualification：-
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Overview
The HGTD7N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 14 A at 25°C. The device utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2 V and a gate-emitter leakage current of 100 nA. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 125 W.
Feature Summary
- UFS Series technology optimized for high-frequency switching applications
- Low on-state conduction loss with moderate variation between 25°C and 150°C
- High input impedance combining MOSFET and bipolar transistor advantages
Applications
- High frequency switch mode power supplies
- Motor control circuits
- Inverter systems
Procurement Notes
Verify manufacturer authenticity as Harris Corporation assets were acquired by Fairchild Semiconductor and subsequently onsemi. Confirm datasheet revision and specific suffix codes to ensure compatibility with original design specifications. Check for end-of-life status or obsolescence notices before procurement planning.
Selection Notes
Select this component for applications requiring 600V blocking capability with moderate current handling up to 14A. Ensure thermal management supports 125W dissipation in the TO-247 package. Verify gate drive requirements align with the specified 20V maximum gate-emitter voltage limits.
Part Context
This IGBT belongs to the UFS Series, designed for efficient high-voltage switching. It shares architectural similarities with other Harris/Fairchild IGBTs like the HGTP12N60B3 but offers lower current ratings suitable for smaller power stages. The series emphasizes low saturation voltage for improved efficiency in SMPS environments.
Replacement Considerations
Equivalent parts include HGTG12N60B3 and HGTD7N60C3. Verify pinout compatibility and thermal resistance values when substituting. Cross-reference with Fairchild or onsemi datasheets for updated electrical characteristics if sourcing from modern distributors.
