ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 14A TO-252
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：165µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：23 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
Download product information
Overview
The HGTD7N60C3S9A is an N-channel Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's UFS Series. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 14A at 25°C. The device integrates an anti-parallel ultrafast diode, offering low conduction loss and rugged switching performance. Packaged in TO-263AB for surface mount applications, it operates within a junction temperature range of -40°C to +150°C.
Feature Summary
- Integrates an anti-parallel ultrafast diode for simplified circuit design
- Optimized for high-frequency switch mode power supply applications
- Provides low conduction loss with moderate voltage drop variation across temperature
Applications
- High frequency switch mode power supplies
- High voltage switching circuits requiring low conduction losses
- Inverter and converter topologies utilizing integrated freewheeling diodes
Procurement Notes
Verify the specific suffix 'S9A' against official datasheets to confirm tape-and-reel packaging specifications. Confirm that the component is sourced from Fairchild Semiconductor or authorized successors like onsemi, as manufacturing rights have transferred. Ensure the part number matches the exact electrical ratings and package type required for the target application.
Selection Notes
Select this IGBT when a built-in ultrafast diode is required to reduce component count and board space. The TO-263AB package suits surface mount designs needing robust thermal performance. Compare the 14A current rating and 600V blocking capability against system requirements to ensure adequate headroom for transient voltages and load currents.
Part Context
This component belongs to the UFS Series of N-channel IGBTs, which are characterized by ruggedness and ultrafast recovery times. The series is designed to combine the high input impedance of MOSFETs with the low on-state conduction loss of bipolar transistors, targeting efficiency improvements in high-voltage power conversion systems.
Replacement Considerations
Publicly confirmed substitutes include HGTG12N60A4 and HGT1S12N60C3DRS9A. Verify pinout compatibility and thermal characteristics before substitution. Note that manufacturer transitions may affect availability and documentation sources.
