ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 1200V 35A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
- Power - Max：298 W
- Switching Energy：850µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：23ns/165ns
- Test Condition：960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：70 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The HGTG10N120BND is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 35 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.45 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 298 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel IGBT configuration for high-voltage switching applications
- Integrated anti-parallel hyperfast diode for efficient freewheeling
- Through-hole TO-247-3 packaging for robust thermal management
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor control drives
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated in official documentation. Check for obsolescence notices or lifecycle changes. Ensure the specific suffix matches design requirements. Validate datasheet revisions against current engineering specifications before integration.
Selection Notes
Evaluate thermal resistance characteristics relative to the intended heatsink design. Compare saturation voltage and switching losses against alternative devices in the same voltage class. Verify gate drive compatibility with the specified 20 V limits. Assess package mounting constraints for the TO-247-3 form factor. Review derating curves for operation above 25°C ambient temperature.
Part Context
This component belongs to the HGTG series of high-power IGBTs from onsemi. The series is designed for demanding industrial applications requiring high voltage blocking capabilities. Similar parts in the lineup may offer different current ratings or diode speeds while maintaining the same package footprint.
Replacement Considerations
Cross-reference with other HGTG series variants such as HGTG11N120CND or HGTG18N120BND for higher current options. Verify pinout compatibility when substituting with equivalent IGBTs from other manufacturers. Ensure thermal performance metrics meet or exceed original design specifications.
