HGTG11N120CND

Overview

The HGTG11N120CND is a non-punch-through (NPT) N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It integrates an IGBT and an anti-parallel hyperfast diode in a single TO-247-3 package. The device features a collector-emitter voltage rating of 1200V and a continuous collector current of 43A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 2.1V, a fall time of 340ns at 150°C junction temperature, and a short-circuit withstand time of 8μs at VGE=15V. Thermal performance is defined by a junction-to-case thermal resistance of 0.42°C/W for the IGBT and 1.25°C/W for the diode.

Feature Summary

• Integrates an NPT IGBT with an anti-parallel hyperfast recovery diode for simplified circuit design.
• Provides high power density with a 1200V blocking capability and 43A continuous current rating.
• Features fast switching characteristics with low turn-off losses suitable for mid-to-high frequency applications.
• Includes robust short-circuit protection capabilities to enhance system reliability under fault conditions.

Applications

• AC and DC motor control systems
• Switching power supplies
• Drivers for solenoids, relays, and contactors

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and internal component variations. Ensure that any alternative part numbers are cross-referenced with the latest product change notices to guarantee functional equivalence. Confirm RoHS compliance status directly from the source documentation before procurement.

Selection Notes

Select this component for applications requiring high voltage isolation and moderate switching speeds. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the short-circuit withstand time when designing protection circuits for inductive loads. Verify that the gate drive voltage levels align with the specified absolute maximum ratings.

Part Context

This device belongs to the HGTG series of non-punch-through IGBTs from onsemi. It combines the high input impedance of MOSFETs with the low conduction loss of bipolar transistors. The integration of the hyperfast diode reduces the component count in half-bridge configurations compared to discrete IGBT and diode pairs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with the manufacturer's official replacement guide or datasheet revision history for verified alternatives.

FAQ

What is the short-circuit withstand time for the HGTG11N120CND?

The device has a short-circuit withstand time of 8 microseconds at a gate-emitter voltage of 15V and 15 microseconds at 12V.

What type of diode is integrated with the IGBT in this package?

The HGTG11N120CND integrates an anti-parallel hyperfast recovery diode.

What is the typical fall time of the IGBT at elevated temperatures?

The typical fall time is 340 nanoseconds when the junction temperature is 150°C.