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Product Detailed Parameters
- Description：IGBT 600V 27A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：104 W
- Switching Energy：150µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：26ns/150ns
- Test Condition：480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG12N60B3 is a UFS Series N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 27A at 25°C case temperature. The device utilizes a TO-247 package with a thermal resistance from junction to case of 1.2°C/W. Electrical characteristics include a typical saturation voltage of 1.6V at 12A and a maximum gate-emitter voltage of ±20V. Switching performance specifies a typical fall time of 112ns at 150°C junction temperature.
Feature Summary
- Combines high input impedance of MOSFETs with low on-state conduction loss of bipolar transistors
- Features ultrafast switching characteristics suitable for moderate frequency applications
- Includes short circuit withstand capability for robust operation under fault conditions
Applications
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays, and contactors
Procurement Notes
Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor before acquisition by onsemi. Confirm the specific revision level required for your design, as datasheet revisions may exist. Ensure that the TO-247 pinout matches your PCB footprint requirements. Check for any RoHS compliance updates if environmental regulations apply to your final assembly.
Selection Notes
Select this IGBT for applications requiring low conduction losses at moderate switching frequencies. Evaluate the thermal management capabilities against the 1.2°C/W junction-to-case resistance. Consider the short circuit withstand time limits when designing protection circuits. Verify that the gate drive voltage aligns with the specified 15V or 20V operating ranges for optimal performance.
Part Context
This device belongs to the UFS Series of rugged N-Channel IGBTs. It was formerly known as developmental type TA49171. The product line combines MOS gate technology with bipolar conduction properties. It is designed for high voltage switching applications where efficiency and reliability are critical parameters.
Replacement Considerations
Check for equivalents within the same UFS series family. Verify pin compatibility in the TO-247 package. Ensure electrical ratings meet or exceed the original specifications. Consult updated datasheets from the current manufacturer for any parameter changes.
