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The HGTG12N60C3D is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Harris Corporation. It integrates a Hyperfast anti-parallel diode with a TA49123 IGBT and TA49061 diode development types. The device operates at a collector-emitter voltage of 600 V and supports a continuous collector current of 24 A at 25°C case temperature. Key electrical parameters include a typical fall time of 210 ns at 150°C junction temperature and a maximum power dissipation of 104 W. It utilizes a TO-247-3 through-hole package.
Verify component authenticity due to the device's End-of-Life status. Confirm manufacturer lineage as the part was originally produced by Harris Corporation and later distributed by entities such as Fairchild Semiconductor and onsemi. Ensure datasheet revisions match the specific production batch requirements for critical design implementations.
Select this component for designs requiring robust 600V blocking capability with integrated fast recovery diode functionality. Evaluate thermal management strategies carefully given the 104 W power dissipation rating in a TO-247-3 package. Consider the 210 ns fall time when designing snubber circuits or determining switching frequencies in high-power applications.
This component belongs to the UFS Series of high-voltage switching devices. It represents a hybrid technology merging MOS gate control with bipolar conduction efficiency. The series was historically significant in power electronics before transitioning through corporate acquisitions involving Harris, Fairchild, and onsemi.
Equivalent parts include HGTP12N60C3D and HGTG12N60A4D. Verify pinout compatibility and thermal resistance specifications when substituting, as packaging variations may exist between original Harris and subsequent manufacturer versions.