HGTG12N60C3D

HGTG12N60C3D

$4.04
  • Description:IGBT 600V 24A TO-247
  • Series:-

SKU:d448eb1b94f1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 24A TO-247
  • Series:-
  • Mfr:Harris Corporation
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):24 A
  • Current - Collector Pulsed (Icm):96 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 15A
  • Power - Max:104 W
  • Switching Energy:380µJ (on), 900µJ (off)
  • Input Type:Standard
  • Gate Charge:48 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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HGTG12N60C3D

Overview

The HGTG12N60C3D is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Harris Corporation. It integrates a Hyperfast anti-parallel diode with a TA49123 IGBT and TA49061 diode development types. The device operates at a collector-emitter voltage of 600 V and supports a continuous collector current of 24 A at 25°C case temperature. Key electrical parameters include a typical fall time of 210 ns at 150°C junction temperature and a maximum power dissipation of 104 W. It utilizes a TO-247-3 through-hole package.

Feature Summary

  • Combines high input impedance MOSFET gate drive characteristics with low on-state conduction loss of bipolar transistors.
  • Integrates a Hyperfast anti-parallel diode for efficient switching applications.
  • Features stable on-state voltage drop performance across operating temperatures from 25°C to 150°C.

Applications

  • High-frequency switching power supplies
  • Motor control circuits
  • Inverter systems

Procurement Notes

Verify component authenticity due to the device's End-of-Life status. Confirm manufacturer lineage as the part was originally produced by Harris Corporation and later distributed by entities such as Fairchild Semiconductor and onsemi. Ensure datasheet revisions match the specific production batch requirements for critical design implementations.

Selection Notes

Select this component for designs requiring robust 600V blocking capability with integrated fast recovery diode functionality. Evaluate thermal management strategies carefully given the 104 W power dissipation rating in a TO-247-3 package. Consider the 210 ns fall time when designing snubber circuits or determining switching frequencies in high-power applications.

Part Context

This component belongs to the UFS Series of high-voltage switching devices. It represents a hybrid technology merging MOS gate control with bipolar conduction efficiency. The series was historically significant in power electronics before transitioning through corporate acquisitions involving Harris, Fairchild, and onsemi.

Replacement Considerations

Equivalent parts include HGTP12N60C3D and HGTG12N60A4D. Verify pinout compatibility and thermal resistance specifications when substituting, as packaging variations may exist between original Harris and subsequent manufacturer versions.

HGTG12N60C3DHGTG12N60C3D
$4.04
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