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Product Detailed Parameters
- Description：IGBT 600V 21A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：21 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：70 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG12N60D1D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C case temperature. The device integrates an anti-parallel hyperfast diode and utilizes Ultra Fast Switching (UFS) technology. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical fall time of 210 ns at 150°C junction temperature, and a power dissipation rating of 104 W. It operates within a temperature range of -40°C to +150°C.
Feature Summary
- Integrates an anti-parallel hyperfast diode for efficient switching applications
- Utilizes UFS technology to achieve low conduction loss and fast switching speeds
- Provides high input impedance characteristic of MOSFETs combined with bipolar transistor on-state performance
Applications
- High-frequency hard-switching power supplies
- Motor control systems requiring fast switching capabilities
- Inverter circuits in power conversion equipment
Procurement Notes
Verify the exact suffix 'D1D' against official datasheets, as public records predominantly list the 'C3D' variant. Confirm manufacturer lineage from Harris Corporation through Intersil to onsemi. Ensure component authenticity and check for End-of-Life status or obsolescence notices before procurement planning.
Selection Notes
Select this component for designs requiring 600V blocking capability and 24A continuous current handling. The integrated hyperfast diode simplifies circuit topology by eliminating external freewheeling diodes. Verify thermal management requirements given the 104W power dissipation rating and ensure gate drive voltages remain within the ±20V limit.
Part Context
This part belongs to the UFS Series of IGBTs originally developed by Harris Corporation. The product line was later managed by Intersil and subsequently acquired by onsemi. The HGTG12N60 series represents a specific generation of ultra-fast switching devices designed for high-efficiency power electronics applications.
Replacement Considerations
Public documentation confirms the HGTG12N60C3D as a verified equivalent part number from the same manufacturer lineage. Other variants such as HGTP12N60C3D may offer similar electrical characteristics but differ in package type.
