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Product Detailed Parameters
- Description：24A, 600V, RUGGED, UFS SERIES N
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGTG12N60DID is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 24 A at a case temperature of 25°C. The device integrates an anti-parallel hyperfast diode, with a typical fall time of 210 ns at a junction temperature of 150°C. Designed for rugged switching applications, it offers low conduction loss and includes short-circuit rating capabilities.
Feature Summary
- Combines high input impedance MOSFET gate drive with low on-state conduction loss of bipolar transistors
- Integrates an anti-parallel hyperfast diode for efficient switching operations
- Provides short-circuit rating capability for enhanced system protection
Applications
- High voltage switching circuits requiring robust performance
- Power conversion systems utilizing ultra-fast switching characteristics
- Applications demanding low conduction losses in IGBT modules
Procurement Notes
Verify the specific suffix 'DID' against official Harris or successor manufacturer datasheets to confirm pinout and packaging details. Ensure compatibility with existing thermal management designs given the 24A rating. Confirm that the integrated hyperfast diode specifications meet the reverse recovery requirements of the target circuit application.
Selection Notes
Select this component for applications requiring a 600V blocking voltage and 24A continuous current handling. Consider the 210ns fall time for switching frequency limitations. Evaluate the thermal resistance requirements for maintaining the junction temperature within safe operating limits during high-duty cycle operations.
Part Context
This part belongs to the UFS Series of N-channel IGBTs produced by Harris Corporation. The series is characterized by rugged construction and ultra-fast switching speeds. Harris Semiconductor assets were subsequently acquired by Intersil and later Renesas, so documentation may appear under these successor entities.
Replacement Considerations
Equivalent parts include the HGTG12N60C3D from Fairchild and ON Semiconductor. Verify electrical parameters such as Vceo and Ic before substitution. Ensure the replacement package matches the original mounting requirements.
