HGTG18N120BND

Overview

The HGTG18N120BND is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 1.2 kV and supports a continuous collector current of 54 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.45 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 390 W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrated anti-parallel diode for simplified circuit design
• Hyperfast diode technology for optimized switching performance
• Robust thermal management capabilities via TO-247-3 package

Applications

• High-frequency inverters
• Motor control systems
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies

Procurement Notes

Verify the current lifecycle status before procurement, as this component may be discontinued or subject to limited availability. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Ensure that the specific ordering suffix matches the required packaging configuration. Cross-reference datasheet revisions to guarantee compatibility with existing designs.

Selection Notes

Select this IGBT for applications requiring high voltage blocking and moderate current handling. Evaluate the thermal resistance characteristics against the intended heat sink solution. Verify that the gate drive voltage remains within the specified ±20 V limits. Consider the switching energy losses in relation to the operating frequency requirements of the target system.

Part Context

This component belongs to the HGTG series of IGBTs from onsemi, designed for general-purpose power switching applications. The series typically combines fast IGBT chips with hyperfast recovery diodes. It serves as a discrete solution for medium-power electronics where reliability and switching speed are critical factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference tools or contact onsemi technical support for verified alternatives.