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Product Detailed Parameters
- Description：IGBT 1000V 34A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：4.1V @ 10V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：163 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG20N100D2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 1000V and a continuous collector current rating of 34A. The device is housed in a TO-247-3 through-hole package, suitable for high-power switching applications. It combines the high input impedance of MOSFETs with the low conduction losses of bipolar transistors.
Feature Summary
- Combines high input impedance of MOS technology with low conduction losses of bipolar transistors
- Designed for high-voltage switching applications requiring robust performance
- Utilizes a TO-247-3 through-hole package for effective thermal management
Applications
- High voltage power switching circuits
- Industrial motor control systems
- Power supply units requiring high voltage isolation
Procurement Notes
Verify manufacturer documentation to confirm specific RoHS compliance status, as sources indicate both compliant and non-compliant variants exist. Ensure the TO-247-3 package matches your PCB footprint requirements. Cross-reference datasheets from Intersil or L3Harris for accurate electrical characteristics before integration into designs.
Selection Notes
Select this component for applications demanding high voltage blocking capability up to 1000V and moderate current handling at 34A. The TO-247-3 package facilitates efficient heat dissipation for through-hole mounting. Consider thermal resistance specifications when designing heatsinking solutions for continuous operation under load conditions.
Part Context
This IGBT belongs to the family of high-voltage switching devices produced by Harris Corporation, now part of L3Harris Technologies. These components are engineered for reliability in demanding electronic environments, leveraging advanced semiconductor processing techniques to ensure stable performance across varying temperature ranges and switching frequencies.
Replacement Considerations
Direct substitutes may include other 1000V, 34A N-channel IGBTs in TO-247 packages from manufacturers such as Infineon or Mitsubishi. Verify pinout compatibility and thermal characteristics when considering alternative brands to ensure seamless integration without redesigning the surrounding circuitry.
