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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：105µJ (on), 150µJ (off)
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：15ns/73ns
- Test Condition：390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：35 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG20N60A4D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and operates within a junction temperature range of -55°C to +150°C. Power dissipation is rated at 290 W, with a maximum gate-emitter voltage of ±20 V. It is housed in a TO-247-3 through-hole package.
Feature Summary
- Combines MOSFET high input impedance with bipolar transistor low conduction loss characteristics
- Integrated anti-parallel ultra-fast recovery diode for efficient switching applications
- Optimized for high-frequency switching mode power supplies and motor control systems
Applications
- Motor control drives
- Inverter systems
- High-frequency switching mode power supplies
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation. Check for lead-free specifications and REACH SVHC declarations before integration into production designs requiring regulatory adherence.
Selection Notes
Select this component for high-voltage applications requiring robust current handling capabilities. Ensure thermal management solutions support the 290 W power dissipation rating. Verify that the driving circuit accommodates the specified gate-emitter voltage limits and switching characteristics for optimal performance.
Part Context
This IGBT belongs to the HGTG series from onsemi, formerly Fairchild Semiconductor. It represents a legacy product line designed for medium-to-high power electronics. The TO-247-3 package provides reliable thermal performance for industrial and commercial power conversion equipment.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternative 600V IGBTs with similar current ratings and package configurations only after verifying electrical compatibility and thermal requirements.
