HGTG20N60B3-FS

HGTG20N60B3-FS

$3.05
  • Description:IGBT 600V 40A TO-247
  • Series:-

SKU:c03e757a9727 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 40A TO-247
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
  • Power - Max:165 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:135 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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HGTG20N60B3-FS

Overview

The HGTG20N60B3-FS is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, part of the HiPerFAST series. It features a maximum collector-emitter voltage (Vceo) of 600 V and a continuous collector current (Ic) of 20 A at 25°C. The device utilizes advanced trench gate technology to achieve low saturation voltage and fast switching speeds. Key electrical parameters include a maximum gate-emitter voltage (Vge) of ±20 V, a typical saturation voltage (Vce(sat)) of 1.8 V at rated conditions, and a power dissipation rating of up to 463 W when mounted on a case. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • HiPerFAST technology for optimized high-frequency switching performance
  • Low saturation voltage for reduced conduction losses
  • Trench gate structure for improved thermal stability and ruggedness

Applications

  • Uninterruptible Power Supplies (UPS)
  • High-frequency Switch Mode Power Supplies (SMPS)
  • Induction Heating Systems
  • Motor Control Applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability from secondary markets. Confirm package integrity and pin alignment against official datasheet specifications before integration. Check for RoHS compliance markings if environmental regulations apply to the end product. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to soldering.

Selection Notes

Select this component for designs requiring robust 600V blocking capability with moderate current handling up to 20A. Consider the thermal resistance characteristics and required heatsinking to maintain junction temperatures within safe operating limits during high-duty cycle operations. Evaluate gate drive requirements to ensure compatibility with the specified ±20V gate-emitter voltage limits for optimal switching performance.

Part Context

This IGBT belongs to Fairchild's HiPerFAST family, designed for efficient power conversion in demanding industrial and consumer applications. The 'FS' suffix typically denotes specific packaging or tape-and-reel configurations depending on manufacturing lot variations. As Fairchild Semiconductor was acquired by ON Semiconductor, legacy documentation may reference either entity, but the core device specifications remain consistent with the original HiPerFAST design lineage.

Replacement Considerations

Direct replacements must match the 600V/20A rating and TO-247 package. Verify equivalent Vce(sat) and switching times to ensure circuit compatibility. Consult updated ON Semiconductor catalogs for modern equivalents with potentially improved thermal or electrical characteristics.

HGTG20N60B3-FSHGTG20N60B3-FS
$3.05
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