HGTG20N60B3

$3.05

Description：IGBT 600V 40A TO-247
Series：-

SKU:b197f1a61647 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-247
Series：-
Mfr：Harris Corporation
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
Power - Max：165 W
Switching Energy：475µJ (on), 1.05mJ (off)
Input Type：Standard
Gate Charge：80 nC
Td (on/off) @ 25°C：-
Test Condition：480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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HGTG20N60B3

Overview

The HGTG20N60B3 is a 600 V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, later acquired by onsemi. It belongs to the HGTP/HGTG B3 series and utilizes UFS technology. Key electrical parameters include a collector current of 40 A, a collector-emitter saturation voltage of 2 V, and a gate charge of 80 nC. The device features a 140-ns fall time characteristic typical of 600-V IGBTs in this family. It is housed in a TO-247-3 package with through-hole mounting capabilities.

Feature Summary

Utilizes UFS (Ultra Fast Switching) technology for optimized switching performance.
Features a 140-ns fall time suitable for high-frequency applications.
Designed as a single N-channel IGBT with robust thermal characteristics.

Applications

High-frequency power conversion systems
Motor drive inverters
Switch-mode power supplies

Procurement Notes

Verify component authenticity carefully due to the acquisition history involving Harris Corporation, onsemi, and potential legacy stock. Confirm the specific manufacturer marking matches the intended source, as distribution channels may hold inventory from various eras of ownership. Check RoHS compliance status against the specific production batch date code.

Selection Notes

Select this component when a 600 V rating and 40 A continuous collector current are required. The 2 V saturation voltage and 80 nC gate charge offer a balance between conduction loss and switching speed. Ensure the application can accommodate the TO-247-3 package form factor and the specific thermal resistance requirements associated with this footprint.

Part Context

This part is part of the broader HGTG/HGTP series of 600 V IGBTs originally developed by Harris Semiconductor. Following corporate acquisitions, manufacturing and documentation responsibilities transitioned to Fairchild Semiconductor and subsequently to onsemi. The 'B3' suffix typically denotes specific internal process or packaging revisions within this product line.

Replacement Considerations

Direct functional equivalents include the HGTG30N60B3D and HGTG40N60B3 for higher current variants. Cross-manufacturer replacements such as IXYS 20N60B or Littelfuse GenX3 series devices should be evaluated based on pin compatibility and exact electrical parameter matching.

FAQ

What is the fall time specification for the HGTG20N60B3?

The device exhibits a fall time of approximately 140 ns, which is characteristic of 600 V IGBTs in this specific series.

Is the HGTG20N60B3 currently in active production?

Distribution records indicate the part may be listed as discontinued or having limited availability, reflecting its legacy status following the Harris Corporation acquisition timeline.