HGTG20N60B3D

HGTG20N60B3D

$2.74
  • Description:IGBT 600V 40A TO-247-3
  • Series:-

SKU:b7a42e12710a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 40A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
  • Power - Max:165 W
  • Switching Energy:475µJ (on), 1.05mJ (off)
  • Input Type:Standard
  • Gate Charge:80 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):55 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Download product information

HGTG20N60B3D

Overview

The onsemi HGTG20N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing UFS technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 70 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 1.8 V. It operates within a temperature range of -55°C to +150°C, with a maximum power dissipation (Pd) of 290 W. The component is housed in a TO-247-3 through-hole package.

Feature Summary

  • Single N-channel IGBT configuration
  • UFS technology implementation
  • Through-hole mounting capability

Applications

    Procurement Notes

    Verify the specific ordering suffix against official documentation to confirm exact electrical characteristics and packaging details. Confirm availability status as distribution channels may indicate limited stock or end-of-life conditions for this component series.

    Selection Notes

    Select this component based on its 600 V blocking voltage and 70 A current rating requirements. Ensure the thermal management design supports the 290 W power dissipation limit. Verify that the TO-247-3 package dimensions fit the target PCB layout constraints.

    Part Context

    This part belongs to the HGTG series of IGBTs from onsemi. It shares the TO-247-3 package form factor with other high-power switching devices in the manufacturer's portfolio, designed for robust industrial applications requiring reliable high-voltage performance.

    Replacement Considerations

    Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides for compatible alternatives.

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