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The onsemi HGTG20N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing UFS technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 70 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 1.8 V. It operates within a temperature range of -55°C to +150°C, with a maximum power dissipation (Pd) of 290 W. The component is housed in a TO-247-3 through-hole package.
Verify the specific ordering suffix against official documentation to confirm exact electrical characteristics and packaging details. Confirm availability status as distribution channels may indicate limited stock or end-of-life conditions for this component series.
Select this component based on its 600 V blocking voltage and 70 A current rating requirements. Ensure the thermal management design supports the 290 W power dissipation limit. Verify that the TO-247-3 package dimensions fit the target PCB layout constraints.
This part belongs to the HGTG series of IGBTs from onsemi. It shares the TO-247-3 package form factor with other high-power switching devices in the manufacturer's portfolio, designed for robust industrial applications requiring reliable high-voltage performance.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides for compatible alternatives.