HGTG20N60C3D

Overview

The HGTG20N60C3D is a UFS Series N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It integrates an anti-parallel Hyperfast Diode and utilizes the TA49178 IGBT die with the RHRP3060 diode die. The device features a TO-247 package for through-hole mounting. Key electrical parameters include a collector-emitter breakdown voltage of 600V, a continuous collector current of 45A at 25°C case temperature, and a maximum power dissipation of 164W. The saturation voltage is typically 1.4V at 25°C, rising to 1.5V at 150°C. Switching characteristics include a typical fall time of 108ns at 150°C and short-circuit withstand times ranging from 4µs to 10µs depending on gate voltage.

Feature Summary

• Combines high input impedance MOSFET gate drive with low on-state conduction loss bipolar transistor output.
• Integrated anti-parallel Hyperfast Diode provides fast reverse recovery performance.
• Capable of withstanding short-circuit conditions for specified durations under defined test conditions.
• Maintains moderate variation in on-state voltage drop across the operating temperature range.

Applications

• AC and DC motor controls
• Power supplies and drivers for solenoids
• Drivers for relays and contactors

Procurement Notes

Verify component authenticity and datasheet revision status when sourcing this part, as it was originally produced by Fairchild Semiconductor before acquisition by onsemi. Confirm that the specific lot matches the required specifications, particularly regarding the integrated diode type and packaging standards. Ensure handling procedures account for electrostatic discharge sensitivity inherent to IGBT gate structures.

Selection Notes

Select this component for applications requiring moderate switching frequencies where low conduction losses are critical. Evaluate thermal management requirements based on the 0.76°C/W junction-to-case thermal resistance for the IGBT section. Consider the 600V switching safe operating area limits when designing circuits with inductive loads or potential voltage spikes exceeding standard operating ranges.

Part Context

This device belongs to the UFS Series, representing a specific generation of high-voltage switching devices from Fairchild Semiconductor. It serves as a discrete solution for medium-power industrial applications. The product line has been transitioned to onsemi following corporate acquisitions, but the technical specifications remain defined by the original Fairchild documentation.

Replacement Considerations

Direct replacements must match the 600V rating, 45A current capacity, and TO-247 package. Verify if alternative parts offer compatible switching speeds and thermal characteristics. Note that newer generations may have different pinouts or electrical profiles requiring circuit re-evaluation.

FAQ

What is the short-circuit withstand time for the HGTG20N60C3D?

The short-circuit withstand time is 4 µs at VGE = 12V and 10 µs at VGE = 10V, tested at TJ = 125°C with VCE(PK) = 360V and RG = 10Ω.

Does the HGTG20N60C3D include an internal Zener diode for gate protection?

No, the device does not have an internal monolithic Zener diode from gate to emitter. External gate protection is recommended if required.

What is the typical turn-off energy loss at 150°C?

At TJ = 150°C, ICE = IC110, VCE = 480V, VGE = 15V, and RG = 10Ω, the typical turn-off energy loss (EOFF) is 1.2 mJ, with a maximum of 1.7 mJ.