HGTG2ON60C3DR

$2.73

Description：40A, 600V, RUGGED UFS SERIES N C
Series：*

SKU:c1d54526a9dc Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：40A, 600V, RUGGED UFS SERIES N C
Series：*
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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HGTG2ON60C3DR

Overview

The HGTG2ON60C3DR is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Harris Corporation. It features a rugged design with an integrated anti-parallel hyperfast diode. The device operates with a maximum collector-emitter voltage of 600V and supports a continuous collector current of 24A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65V and a power dissipation rating of 104W. It utilizes a TO-263AB surface-mount package for efficient thermal management in high-voltage switching applications.

Feature Summary

Integrated anti-parallel ultrafast recovery diode for simplified circuit design
Rugged construction optimized for demanding motor control operations
Low conduction loss characteristics for improved efficiency
High short-circuit capability for robust system protection

Applications

Motor control systems requiring high voltage switching
High frequency power conversion circuits
Inductive load switching applications

Procurement Notes

Verify component authenticity through authorized distributors or manufacturer channels due to potential legacy status. Confirm RoHS compliance and specific suffix variations against official datasheets before integration. Ensure supply chain stability as this part may be subject to end-of-life transitions or obsolescence notices.

Selection Notes

Select this IGBT for applications requiring a balance of low on-state voltage drop and fast switching speeds. The integrated diode eliminates the need for external freewheeling components, reducing board space. Verify thermal requirements align with the 104W dissipation rating and ensure gate drive voltages remain within the specified -20V to 20V range.

Part Context

This component belongs to the UFS Series of N-channel IGBTs designed by Harris Corporation. The series is characterized by its ruggedness and suitability for high-performance switching environments. The 'DR' suffix typically indicates a tape-and-reel packaging format for automated assembly, distinguishing it from tube-packaged variants like the HGTG12N60C3D.

Replacement Considerations

Direct substitutes include HGTP12N60C3DR and HGT1S12N60C3DRS9A, which share similar 24A/600V specifications and UFS technology. Cross-reference pinouts and thermal resistance values when replacing with devices from Fairchild or Intersil to ensure mechanical and electrical compatibility.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.