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Product Detailed Parameters
- Description：IGBT 600V 75A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 30A
- Power - Max：463 W
- Switching Energy：280µJ (on), 240µJ (off)
- Input Type：Standard
- Gate Charge：225 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：390V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG30N60A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, originally developed by Fairchild Semiconductor. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 250 nA, and a power dissipation capacity of 463 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Combines high input impedance with low conduction loss characteristics typical of bipolar transistors.
- Optimized for fast switching applications such as switch-mode power supplies.
- Designed for robust performance in high-frequency environments.
Applications
- Switch-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Welding machines
Procurement Notes
This component has reached the end-of-life stage, meaning it is obsolete and will no longer be manufactured by onsemi. Availability is restricted, and distributors may not stock this item in all regions. Engineers should verify current supply status carefully and consider alternative components for new designs due to the discontinuation status.
Selection Notes
Select this part only if legacy compatibility is required or for maintenance of existing equipment. Verify that the 600V rating and 75A current capability meet the specific circuit demands. Ensure the thermal management system can handle the specified power dissipation. Check for updated replacement options from the manufacturer's portfolio before finalizing the design.
Part Context
The HGTG30N60A4 belongs to the SMPS Series of IGBTs. Originally produced by Fairchild Semiconductor, the product line was integrated into onsemi following the acquisition completed in 2016. This specific model represents a standard silicon-based solution for medium-power switching applications before being superseded by newer technologies.
Replacement Considerations
HGTG30N60B3D
FAQ
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is rated at 600 V.
Is this component suitable for high-frequency switching?
Yes, it is optimized for fast switching applications, including switch-mode power supplies.
What is the operating temperature range?
The minimum operating temperature is -55°C and the maximum is +150°C.
