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Product Detailed Parameters
- Description：IGBT 600V 75A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 30A
- Power - Max：463 W
- Switching Energy：280µJ (on), 240µJ (off)
- Input Type：Standard
- Gate Charge：225 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：390V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi HGTG30N60A4D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage (VCE(sat)) of 1.8 V and a maximum power dissipation (Pd) of 463 W. It operates within a temperature range of -55°C to +150°C, with a typical turn-off time of 60 ns.
Feature Summary
- Combines MOSFET high input impedance with bipolar transistor low conduction loss for efficient switching.
- Optimized for high-frequency operation suitable for switch-mode power supply applications.
- Features a soft recovery characteristic in the integrated anti-parallel diode to reduce switching losses.
Applications
- High-frequency Switch-Mode Power Supplies (SMPS)
- Motor Control Systems
- Inverter Circuits
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as required by project standards. Ensure the TO-247-3 package dimensions match the design footprint. Validate that the specific lot code corresponds to active or qualified inventory before integration into production systems.
Selection Notes
Select this component when a 600V rating and 75A continuous current capacity are required in a TO-247 package. Consider the 1.8V VCE(sat) for thermal management calculations. Evaluate the 60ns turn-off time against system switching frequency requirements. Compare power dissipation limits with available heatsinking solutions to ensure operation within the 150°C junction temperature limit.
Part Context
Originally manufactured by Fairchild Semiconductor, this part was incorporated into onsemi's portfolio following the acquisition completed in 2016. The HGTG30N60A4D belongs to the legacy IGBT series designed for robust performance in medium-to-high power conversion applications. It serves as a standard solution for designers transitioning from older discrete technologies to integrated gate-controlled devices.
Replacement Considerations
Direct substitutes include the HGTG30N60B3D, which offers similar voltage ratings but differs in saturation voltage and power dissipation characteristics. Verify pinout compatibility and thermal resistance values before swapping components in existing PCB layouts to ensure electrical and mechanical fit.
