HGTG30N60B3

Overview

The HGTG30N60B3 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a continuous collector current (Ic) of 60 A at 25°C. The device utilizes a TO-247 package for through-hole mounting, providing a power dissipation capability of 208 W. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V and a maximum gate-emitter voltage of ±20 V. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• High-voltage switching capability with 600 V collector-emitter breakdown rating
• Robust thermal management via TO-247 through-hole flange mount packaging
• Low conduction loss characteristics optimized for efficient power conversion

Applications

• Industrial motor drives and control systems
• Switch-mode power supplies (SMPS)
• Inverter circuits in renewable energy systems

Procurement Notes

Verify the manufacturer origin carefully, as this part number was originally produced by Harris Corporation, which later became Intersil and subsequently Renesas. Ensure the specific batch or datasheet aligns with Harris-era specifications if legacy compatibility is required. Confirm RoHS compliance status as original Harris parts may predate modern environmental directives.

Selection Notes

Select this component when a 600 V, 60 A IGBT in a TO-247 package is required for high-power applications. Compare the 1.45 V saturation voltage against alternatives to ensure thermal performance meets system constraints. Verify that the 208 W power dissipation rating is sufficient for the intended heat sink configuration and ambient operating conditions.

Part Context

This device belongs to the HGTG series of IGBTs, historically associated with Harris Semiconductor before its acquisition by Intersil and later Renesas. The 'B3' suffix typically denotes specific internal process variations or packaging standards from the Harris era. It serves as a discrete power switch in medium-to-high power electronic designs.

Replacement Considerations

Direct replacements may include the Fairchild/ON Semiconductor HGTG30N60B3D, which shares identical pinout and electrical ratings. Other equivalents from Renesas or ON Semi should be verified for matching VCEO, Ic, and package dimensions to ensure mechanical fit.