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Product Detailed Parameters
- Description：IGBT NPT 600V 60A TO-247
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：208 W
- Switching Energy：550µJ (on), 680µJ (off)
- Input Type：Standard
- Gate Charge：250 nC
- Td (on/off) @ 25°C：36ns/137ns
- Test Condition：480V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG30N60B3_NL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It belongs to the UFS series and utilizes Ultra-Fast Soft Recovery technology. The device features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a saturation voltage of 1.45 V and a power dissipation rating of 208 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Ultra-Fast Soft Recovery diode integration for reduced switching losses
- Low saturation voltage for efficient conduction
- High input impedance compatible with standard gate drivers
Applications
- Uninterruptible Power Supplies (UPS)
- Switch-mode power supplies
- Motor control systems
Procurement Notes
Verify the manufacturer status carefully as this part number indicates an older Fairchild Semiconductor designation now managed by onsemi. Confirm the specific suffix requirements for your assembly process. Check for End-of-Life notices or alternative recommendations from the current manufacturer documentation before finalizing procurement plans.
Selection Notes
Select this component when a 600V IGBT with high-speed soft recovery characteristics is required. Ensure the thermal management design supports the 208 W power dissipation limit in the TO-247-3 package. Verify that the gate drive voltage levels are compatible with the specified maximum ratings.
Part Context
This device is part of the HGTG series, representing Fairchild's legacy IGBT portfolio. Following the acquisition of Fairchild Semiconductor by onsemi, these components are maintained under the onsemi brand structure. The '_NL' suffix typically denotes non-leaded packaging compliant with environmental directives.
Replacement Considerations
Direct replacements may include the HGTG30N60B3D variant. Other compatible options within the same family include the HGTG40N60B3 for higher current capacity. Always consult the latest datasheet for pinout and thermal compatibility.
