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Product Detailed Parameters
- Description：IGBT 600V 63A SUPER-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：63 A
- Current - Collector Pulsed (Icm)：252 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 30A
- Power - Max：208 W
- Switching Energy：1.05mJ (on), 2.5mJ (off)
- Input Type：Standard
- Gate Charge：250 nC
- Td (on/off) @ 25°C：40ns/320ns
- Test Condition：480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-274AA
- Supplier Device Package：SUPER-247 (TO-274AA)
- Grade：-
- Qualification：-
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Overview
The HGTG30N60C3 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, now part of L3Harris Technologies. It features a single configuration housed in a TO-247-3 flange mount package designed for through-hole installation. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V and a power dissipation rating of 208 W. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrated anti-parallel fast recovery diode for efficient commutation
- Trench field-stop technology for low conduction losses
- Robust TO-247-3 flange mount package for high thermal performance
Applications
- High-frequency switching power supplies
- Motor drive inverters
- Uninterruptible power systems (UPS)
Procurement Notes
Verify the manufacturer status carefully as Harris Semiconductor assets were acquired by L3Harris. Confirm the specific datasheet revision and ordering suffixes with authorized distributors or L3Harris directly. Ensure compliance with current REACH and RoHS regulations before integration into new designs.
Selection Notes
Select this component for applications requiring 600V blocking capability and moderate current handling up to 60A. Compare the 1.9V saturation voltage against alternative IGBTs to evaluate conduction loss efficiency. Verify that the TO-247-3 footprint matches the PCB layout requirements for the target thermal management solution.
Part Context
This device belongs to the HGTG series of IGBTs produced by Harris Corporation. The series utilizes trench field-stop technology to optimize the trade-off between conduction and switching losses. This specific model represents a standard offering for general-purpose high-power switching applications prior to corporate restructuring.
Replacement Considerations
The HGTG30N60B3D is a documented equivalent from onsemi featuring similar 600V/60A specifications and TO-247-3 packaging. Verify pinout compatibility and thermal characteristics when substituting.
