ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1000V 55A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 34A
- Power - Max：208 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：240 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
Download product information
Overview
The HGTG34N100E2 is a high-voltage N-channel Power MOSFET manufactured by Harris Corporation, belonging to the G3 series. It features a TO-247AD package and is designed for high-speed switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 1000 V and a continuous drain current (I_D) of 34 A at 25°C. The device exhibits a maximum on-state resistance (R_DS(on)) of 1.6 Ohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +175°C and has a total power dissipation capability of 380 W under case conditions.
Feature Summary
- High voltage blocking capability suitable for industrial and motor control applications
- Optimized low on-resistance for improved efficiency
- Fast switching characteristics with controlled avalanche ruggedness
Applications
- Motor control circuits
- Power supplies
- Industrial inverters
Procurement Notes
Verify the manufacturer origin as Harris Corporation or its successor entities, noting that Harris Semiconductor assets were acquired by Intersil and subsequently Renesas. Confirm the specific datasheet revision matches the component marking. Ensure the TO-247AD package dimensions align with standard specifications. Check for RoHS compliance status if required by the application environment.
Selection Notes
Select this component when a 1000 V rating and 34 A continuous current are required in a TO-247 package. Compare R_DS(on) values against alternatives to ensure thermal management requirements are met. Verify that the switching speed and gate charge characteristics fit the driving circuit constraints. Consider the operating temperature range and power dissipation limits for the specific enclosure design.
Part Context
This part belongs to the G3 series of high-voltage MOSFETs from Harris Corporation. The series is characterized by enhanced performance in terms of on-resistance and switching speed compared to previous generations. These devices are typically used in demanding power electronics environments requiring reliable high-voltage switching capabilities.
Replacement Considerations
Potential substitutes include equivalent 1000 V, 34 A N-channel MOSFETs in TO-247 packages from manufacturers such as Vishay, Infineon, or ON Semiconductor. Verify pinout compatibility and thermal resistance values before substitution.
