HGTG40N60A4

$5.19

Description：IGBT 600V 75A TO-247-3
Series：-

SKU:7c2481664c84 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 75A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 40A
Power - Max：625 W
Switching Energy：400µJ (on), 370µJ (off)
Input Type：Standard
Gate Charge：350 nC
Td (on/off) @ 25°C：25ns/145ns
Test Condition：390V, 40A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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HGTG40N60A4

Overview

The HGTG40N60A4 is an N-channel IGBT from the SMPS Series, rated for a collector-emitter voltage of 600 V. It supports a continuous collector current of 75 A at 25°C case temperature and handles a pulsed current of 300 A. The device features a typical saturation voltage of 1.7 V at 40 A and 25°C, with a maximum gate-emitter voltage of ±20 V. Operating within a junction temperature range of -55°C to 150°C, it offers a total power dissipation of 625 W at 25°C. Packaged in a TO-247-3LD short lead configuration (Case 340CK), this component is designed for high-frequency switching applications.

Feature Summary

Optimized for high-frequency switch mode power supplies
Low on-state conduction loss with moderate variation across operating temperatures
Capable of 100 kHz operation at 390 V and 40 A

Applications

High frequency switch mode power supplies
High voltage switching applications requiring low conduction losses

Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the TO-247-3LD package dimensions match the design requirements. Ensure electrostatic discharge handling protocols are followed during assembly due to gate insulation sensitivity. Check for RoHS compliance status as indicated in the ordering information.

Selection Notes

Select this component when designing circuits requiring 600 V blocking capability with high current handling up to 75 A. Consider the thermal resistance of 0.27 °C/W for heat sink calculations. Evaluate the switching energy losses at the target operating frequency and load current to ensure efficiency meets system specifications.

Part Context

This device belongs to the HGTG series of MOS gated high voltage switching devices. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The part was formerly known as developmental type TA49347.