HGTG40N60C3

HGTG40N60C3

$5.16
  • Description:IGBT 600V 75A TO-247
  • Series:-

SKU:5180a78f9bfd Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 75A TO-247
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 40A
  • Power - Max:291 W
  • Switching Energy:850mJ (on), 1mJ (off)
  • Input Type:Standard
  • Gate Charge:395 nC
  • Td (on/off) @ 25°C:47ns/185ns
  • Test Condition:480V, 40A, 3Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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HGTG40N60C3

Overview

The HGTG40N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS series, manufactured by Harris Corporation. It features a collector-emitter maximum voltage of 600 V and a continuous collector current rating of 75 A at 25°C. The device is housed in a TO-247-3 through-hole package with flange mount capability. Key electrical parameters include a maximum power dissipation of 291 W, a gate-emitter voltage range of -20 V to 20 V, and an operating junction temperature range from -55°C to 150°C.

Feature Summary

  • Combines MOS input characteristics with bipolar output conductivity for efficient high-voltage switching.
  • Designed for high current capacity applications within the UFS series architecture.

Applications

  • High voltage power switching circuits
  • Industrial motor control systems
  • Power supply inverters

Procurement Notes

Verify component authenticity against original manufacturer documentation due to historical brand transitions. Confirm package integrity and pin configuration match TO-247-3 specifications. Check for RoHS compliance status as legacy components may vary. Ensure storage conditions prevent moisture damage prior to soldering.

Selection Notes

Select this IGBT for applications requiring 600V blocking capability and up to 75A continuous current handling. Evaluate thermal management requirements given the 291W power dissipation rating. Consider the through-hole mounting style for mechanical stability in industrial environments. Compare switching speed requirements against specific application needs.

Part Context

This component belongs to the UFS series of N-channel IGBTs produced by Harris Corporation. The series is characterized by high voltage ratings and robust current handling capabilities suitable for demanding power electronics applications. The TO-247 package provides effective heat dissipation for high-power operations.

Replacement Considerations

Cross-reference with onsemi or Renesas equivalents such as the HGTG30N60C3D for similar voltage and current ratings, noting potential differences in current capacity and packaging details. Verify pinout compatibility and thermal characteristics before substitution.

HGTG40N60C3HGTG40N60C3
$5.16
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