HGTG40N60C3R

$7.12

Description：IGBT 600V 75A TO-247
Series：-

SKU:b67b3122dc32 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 75A TO-247
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
Power - Max：291 W
Switching Energy：-
Input Type：Standard
Gate Charge：330 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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HGTG40N60C3R

Overview

The HGTG40N60C3R is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by onsemi. It features a TO-247-3 through-hole package and utilizes silicon technology. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 290 W. The component operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Integrated ultrafast recovery anti-parallel diode for inductive load commutation
Trench field-stop technology for optimized conduction and switching performance
Robust design with high short-circuit capability

Applications

Motor control drives
Switch-mode power supplies
High-frequency inverters

Procurement Notes

Verify the manufacturer origin carefully as Harris Corporation was acquired by L3Harris Technologies, while this specific part number is documented under onsemi/Fairchild Semiconductor lineage. Confirm RoHS compliance status and check for End-of-Life notices or Product Change Notifications before procurement planning.

Selection Notes

Select this component when a rugged IGBT with an integrated fast recovery diode is required for hard-switching applications. Ensure the thermal management system can handle the 290 W dissipation rating and verify that the 600 V blocking voltage meets the circuit requirements.

Part Context

This component belongs to the UFS Series of IGBTs, which are designed for high-efficiency power conversion. The series combines low conduction losses with fast switching speeds, making it suitable for demanding industrial power electronics environments requiring reliable operation under high stress conditions.

Replacement Considerations

Consider the HGTG40N60B3 or HGTG40N60A4 as potential functional replacements within the same voltage and current class. Verify pinout compatibility and thermal characteristics before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.