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Product Detailed Parameters
- Description：IGBT 600V 34A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：55µJ (on), 60µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：11ns/100ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：34 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG7N60A4D is a 600 V N-channel Insulated Gate Bipolar Transistor (IGBT) from the SMPS Series, manufactured by Fairchild Semiconductor. It integrates an anti-parallel hyperfast diode and utilizes the TA49331 IGBT development type with the TA49370 diode. The device features a TO-247 through-hole package with three pins. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a maximum continuous collector current of 7 A, and a maximum gate-emitter voltage of ±20 V. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Optimized for high-frequency switch mode power supplies with low conduction losses
- Integrates an anti-parallel hyperfast recovery diode for efficient switching
- Temperature compensating SABER model available for circuit simulation
Applications
- High frequency switch mode power supplies
- Resonant or soft-switching applications
- High voltage switching circuits requiring low conduction loss
Procurement Notes
Verify component authenticity and datasheet revision when sourcing. Confirm package integrity and pin configuration match the TO-247 standard. Check for obsolescence status as older Fairchild semiconductor parts may have limited availability or be superseded by newer generations. Ensure storage conditions comply with moisture sensitivity levels if applicable.
Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling up to 7 A. The integrated hyperfast diode simplifies circuit topology by eliminating the need for external freewheeling diodes in many topologies. Consider thermal management requirements given the TO-247 package's power dissipation characteristics and the device's suitability for frequencies exceeding 100 kHz.
Part Context
This part belongs to the Fairchild Semiconductor SMPS Series IGBT family, which also includes variants like HGTP7N60A4D and HGTG12N60A4D. These devices share similar architectural features but differ in current ratings and specific switching optimizations. The series is designed to combine MOSFET input impedance with bipolar transistor conduction efficiency.
Replacement Considerations
Direct substitutes include HGTP7N60A4D and HGT1S7N60A4DS from the same manufacturer. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with onsemi equivalents if Fairchild inventory is unavailable.
