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Product Detailed Parameters
- Description：12A, 400V, N CHANNEL IGBT WITH A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGTH12N40CID is a high-voltage switching device manufactured by Harris Corporation, belonging to the UFS Series. It is an N-Channel Insulated Gate Bipolar Transistor (IGBT) integrated with an anti-parallel Hyperfast Diode. The component utilizes MOS gate technology to combine high input impedance with low on-state conduction loss. Designed for robust performance, it features a short circuit rating and maintains a moderate voltage drop variation across operating temperatures from 25°C to 150°C. The device is constructed using specific development types for both the IGBT and the diode elements.
Feature Summary
- Integrates an N-Channel IGBT with an anti-parallel Hyperfast Recovery Diode in a single package
- Features a Short Circuit Rating for enhanced reliability under fault conditions
- Utilizes MOS gated technology to provide high input impedance and low conduction loss
- Designed with low conduction loss characteristics suitable for high-efficiency switching applications
Applications
- High voltage power switching circuits
- Motor drive systems requiring fast recovery diodes
- Industrial power conversion equipment
- Inverter applications utilizing IGBT modules
Procurement Notes
Verify the manufacturer origin carefully as Harris Corporation assets were acquired by Intersil and subsequently Renesas. Confirm the datasheet revision and specific pinout configuration against current official documentation to ensure compatibility with existing designs. Check for RoHS compliance status as legacy Harris components may differ from modern equivalents.
Selection Notes
Select this component when a combined IGBT and freewheeling diode solution is required for high-voltage applications. Ensure the thermal management design accounts for the specific fall time and conduction losses at the intended junction temperature. Verify that the package type matches the PCB footprint requirements and that the voltage ratings exceed the maximum circuit stress levels.
Part Context
This part belongs to the UFS Series of high-power semiconductor devices produced by Harris Corporation. The series is characterized by the integration of MOS-controlled bipolar transistors with hyperfast diodes. These components were designed to offer superior switching speeds and lower conduction losses compared to standard IGBTs, making them suitable for demanding industrial and commercial power electronics applications.
Replacement Considerations
Direct replacements include the HGTG12N60C3D from Intersil or Fairchild, which shares similar packaging and functional descriptions within the UFS series lineage. Verify electrical parameters such as collector-emitter voltage and continuous current ratings before substitution. Cross-reference with ON Semiconductor equivalents if available.
