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Product Detailed Parameters
- Description：12A, 500V, N CHANNEL IGBT WITH A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGTH12N50CID is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. This component features an integrated anti-parallel hyperfast diode, designed for high-efficiency switching applications. It supports a continuous collector current of 12A and withstands a maximum collector-emitter voltage of 500V. The device combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor, making it suitable for power conversion systems requiring robust performance under moderate load conditions.
Feature Summary
- Integrates an anti-parallel hyperfast diode for efficient freewheeling
- Provides high input impedance via insulated gate structure
- Delivers low conduction losses through optimized IGBT design
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating circuits
Procurement Notes
Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by L3Harris Technologies. Ensure the datasheet aligns with the specific lot date code and package marking to confirm authenticity. Cross-reference the part number against official L3Harris catalogs to validate current production status and availability channels.
Selection Notes
Select this component when a 500V blocking capability and 12A continuous current rating are required in a single package. The inclusion of the hyperfast diode eliminates the need for external parallel diodes, simplifying circuit layout. Consider thermal management requirements based on the specific package type and expected switching frequencies for optimal efficiency.
Part Context
This IGBT belongs to the family of discrete power semiconductors produced by Harris Corporation before its acquisition. These components were widely used in industrial and military-grade electronics due to their reliability. The HGTH12N50CID represents a standard solution for medium-power switching tasks where compact integration of the freewheeling path is beneficial.
Replacement Considerations
Consult L3Harris Technologies official substitution guides for direct equivalents. Generic replacements must match the 500V Vces, 12A Ic, and integrated diode specifications precisely to maintain circuit integrity.
