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The HGTP10N40EID is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter voltage rating of 400V and a continuous collector current capacity of 17.5A. The component is designed for high-power switching applications, offering robust performance within its specified electrical limits.
Verify the manufacturer origin and datasheet alignment when sourcing this component. Confirm that the specific part number matches the required 400V and 17.5A specifications for your design. Ensure compatibility with existing thermal management solutions and gate drive requirements before finalizing procurement decisions.
Select this IGBT for applications requiring moderate voltage blocking and current handling capabilities. Consider the thermal resistance and switching speed characteristics relative to your system's power dissipation needs. Ensure the gate drive circuitry supports the input capacitance and threshold voltage specifications provided in the official documentation.
This component belongs to the family of discrete power semiconductors produced by Harris Corporation. It serves as a fundamental building block for power electronics, enabling efficient control of electrical energy in various industrial and commercial systems through semiconductor switching mechanisms.
Public confirmed substitute part numbers are not available in the provided data. Consult official manufacturer cross-reference lists or engineering change notices for verified alternatives.