HGTP10N50E1D

$2.67

Description：IGBT 500V 17.5A TO-220
Series：-

SKU:7840ac21cbf0 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 500V 17.5A TO-220
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：500 V
Current - Collector (Ic) (Max)：17.5 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 17.5A
Power - Max：75 W
Switching Energy：-
Input Type：Standard
Gate Charge：19 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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HGTP10N50E1D

Overview

The HGTP10N50E1D is a single n-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 500 V and a maximum continuous collector current of 17.5 A. The device is housed in a TO-220-3 through-hole package, suitable for high-power applications. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation rating of 75 W. The component utilizes a standard input type for gate control.

Feature Summary

Enhancement-mode n-channel IGBT construction
Through-hole TO-220-3 packaging for robust mounting
High thermal stability with extended operating temperature range

Applications

Industrial motor drives
Power switching circuits
Inverter systems

Procurement Notes

Verify RoHS compliance status as the component is listed as non-compliant in some records. Confirm that the TO-220-3 package matches the design requirements. Ensure the manufacturer source is verified as Harris Corporation or its successor entities to guarantee authenticity. Check for any specific handling instructions regarding the through-hole mounting process.

Selection Notes

Select this component when a 500 V blocking capability and 17.5 A current rating are required. The TO-220-3 package is appropriate for designs needing through-hole assembly. Consider the 75 W power dissipation limit for thermal management planning. Verify compatibility with standard gate drive voltages due to the standard input type specification.

Part Context

This part belongs to the HGTP10 series of IGBTs from Harris Corporation, which includes variants like HGTP10N40C1D and HGTP10N50C1D. These devices are designed for high-performance switching applications. The HGTP10N50E1D specifically offers a 500 V rating, distinguishing it from lower voltage counterparts within the same product family.