HGTP12N6001

Overview

The HGTP12N6001 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a 600V collector-emitter voltage rating and supports a continuous collector current of 12A. The device utilizes a TO-247 through-hole package, designed for robust thermal performance with a maximum power dissipation capability of 75W under specified conditions.

Feature Summary

• Combines MOSFET input characteristics with bipolar transistor output capabilities for efficient high-voltage switching.

Applications

• High-frequency AC motor drives
• Induction heating systems
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet revision and manufacturer lineage, as Harris Corporation's semiconductor assets were acquired by other entities. Confirm that the HGTP12N6001 designation aligns with current supply chain availability and cross-reference part numbers to ensure functional equivalence with modern replacements.

Selection Notes

Select this component for applications requiring moderate current handling at 600V blocking levels. Ensure the thermal management solution accommodates the 75W dissipation rating in the TO-247 package. Validate gate drive requirements against the device's input capacitance and threshold voltage specifications for reliable switching.

Part Context

This IGBT belongs to the HGTP series, which represents Harris Corporation's lineup of high-voltage switching devices. These components integrate the fast switching speed of MOS technology with the low conduction losses of bipolar transistors, targeting industrial power conversion and control applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official distributor databases or manufacturer cross-reference guides for equivalent parts from successor manufacturers holding Harris semiconductor IP.