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Product Detailed Parameters
- Description：IGBT 600V 24A TO-220-3
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 12A
- Power - Max：104 W
- Switching Energy：400µJ (on), 340µJ (off)
- Input Type：Standard
- Gate Charge：71 nC
- Td (on/off) @ 25°C：37ns/120ns
- Test Condition：480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP12N60C3R is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Harris Corporation. It belongs to the UFS Series and features a built-in ultrafast anti-parallel diode. The device is rated for a collector-emitter voltage of 600V and a continuous collector current of 24A at 25°C. It utilizes a TO-263AB surface-mount package with a maximum power dissipation of 104W. The component operates within a temperature range of -40°C to +150°C junction temperature.
Feature Summary
- Integrated ultrafast recovery anti-parallel diode for simplified circuit design
- UFS Series ruggedness optimized for high reliability applications
- Surface-mount TO-263AB package configuration
Applications
- High-frequency switching power supplies
- Motor control inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the manufacturer designation carefully as the part was originally produced by Harris Corporation before acquisition by Fairchild and subsequently onsemi. Confirm the specific suffix 'R' indicates the reel packaging format in official documentation. Check for End-of-Life status or Not Recommended for New Designation notices from current distributors to ensure long-term availability for production.
Selection Notes
Select this component when a 600V IGBT with an integrated fast-recovery diode is required in a surface-mount form factor. Ensure the thermal management solution supports the specified 104W power dissipation limit. Compare saturation voltage and switching times against alternative UFS series devices if lower conduction losses are critical for the specific application efficiency requirements.
Part Context
This device is part of the HGTG/HGTP/HGT1S family of 24A, 600V IGBTs. The HGTP12N60C3R specifically denotes the surface-mount variant in the TO-263AB package, distinct from the through-hole HGTP12N60C3 and the leadless HGTG12N60C3D variants. All share similar electrical characteristics but differ in physical mounting and thermal interface specifications.
Replacement Considerations
Direct pin-compatible replacements include the HGTG12N60C3DR and HGT1S12N60C3DRS9A from the same manufacturer family. Verify that the substitute maintains the same TO-263AB footprint and electrical ratings before implementation.
