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The HGTP15N40C1 is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. Designed for high-voltage applications, it features a collector-emitter voltage rating of 400V and a continuous collector current capacity of 15A. The device exhibits a low on-state voltage of 2.5V and fast switching speeds with turn-off times of 1µs. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220AB package.
Verify component authenticity through authorized distributors or certified secondary market suppliers. Confirm the manufacturer origin as Harris Corporation or its successor entities like Intersil. Inspect physical markings for accuracy against datasheet specifications. Request traceability documentation to ensure compliance with quality standards. Validate package integrity prior to installation.
Select this component for designs requiring robust high-voltage switching capabilities with efficient power dissipation. Ensure the application voltage does not exceed the 400V collector-emitter rating. Verify that the thermal management system supports the specified operating temperatures. Consider the 15A current limit when sizing load requirements. Confirm compatibility with standard TO-220 mounting hardware.
This IGBT belongs to the HGTH/HGTP series designed for high-voltage, low on-dissipation applications. It shares functional similarities with other devices in the family such as the HGTH20N50C1, though ratings differ. The component represents Harris Corporation's contribution to power semiconductor solutions before corporate restructuring.
Publicly confirmed substitute part numbers are not available in the provided source material.