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Product Detailed Parameters
- Description：IGBT 400V 15A TO-220
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：35 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 20V, 35A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The HGTP15N40E1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector current of 15 A and a collector-emitter breakdown voltage of 400 V. The device is housed in a TO-220AB through-hole package with a flange mount configuration. Key electrical parameters include a maximum power dissipation of 75 W and an operating junction temperature range extending up to 150 °C. The component utilizes silicon technology and is designed for high-power switching applications requiring robust performance.
Feature Summary
- High-voltage N-channel IGBT structure optimized for efficient power switching
- Robust thermal management capabilities via flange mount TO-220AB package
- Designed for high-current applications with 15 A continuous collector current rating
Applications
- Motor control systems
- Power supply inverters
- Industrial switching circuits
Procurement Notes
Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by Onsemi. Ensure the part number matches the specific Harris datasheet specifications rather than generic equivalents. Confirm package integrity and pinout alignment with TO-220AB standards before integration into circuit designs.
Selection Notes
Select this component for applications requiring 400 V blocking capability and 15 A current handling. Consider the thermal resistance of the TO-220AB package for heat sinking requirements. Evaluate switching speed characteristics against application needs compared to modern MOSFET alternatives if lower gate drive power is critical.
Part Context
This IGBT belongs to the single discrete transistor category from Harris Corporation's legacy power semiconductor portfolio. It represents a standard through-hole solution for medium-power electronics. The TO-220AB form factor ensures compatibility with traditional PCB mounting techniques and standard heatsink interfaces used in industrial equipment design.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to corporate acquisitions, verify equivalence with Onsemi equivalents or modern IGBTs with matching 400V/15A ratings and TO-220AB packaging.
