HGTP15N50E1

Overview

The HGTP15N50E1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter breakdown voltage of 500 V and a continuous collector current rating of 15 A. The device is designed for through-hole mounting in a TO-220 package with three leads. It operates within a junction temperature range of -55°C to 150°C and utilizes standard input type configuration.

Feature Summary

• Single N-channel IGBT structure
• Through-hole TO-220-3 packaging
• Standard gate input configuration

Applications

• Power switching applications
• Inverter circuits
• Motor control systems

Procurement Notes

Verify the manufacturer designation as Harris Corporation when sourcing this component. Confirm the part status is active and matches the specific HGTP15N50E1 identifier. Ensure the physical package corresponds to the TO-220-3 form factor. Check for RoHS compliance documentation if required by project specifications. Validate that the supplier provides official datasheets confirming the 500V and 15A ratings.

Selection Notes

Select this component for applications requiring a 500V blocking capability and 15A continuous current handling. The TO-220 package facilitates easy thermal management and board integration. Consider the -55°C to 150°C operating range for environmental suitability. Ensure the circuit design supports standard gate drive requirements compatible with this IGBT type.

Part Context

This component belongs to the discrete semiconductor category, specifically within single IGBTs. Harris Corporation produced this device for power electronics markets. The HGTP15N50E1 serves as a fundamental switching element in medium-power electronic designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 500V, 15A N-channel IGBTs in TO-220 packages only after verifying electrical compatibility.