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Product Detailed Parameters
- Description：20A, 350V, N-CHANNEL IGBT
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGTP20N35F3ULR3935 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. This component is rated for a continuous collector current of 20A and a maximum collector-emitter voltage of 350V. It is designed for high-power switching applications requiring robust performance. The device features an ultra-fast recovery anti-parallel diode, which enhances efficiency in hard-switching circuits. Packaged in bulk format, this active part is suitable for industrial power conversion systems where reliable semiconductor switching is critical.
Feature Summary
- Single IGBT configuration with integrated ultra-fast recovery anti-parallel diode
- Rated for 20A continuous collector current and 350V blocking voltage
- Designed for efficient hard-switching applications in power electronics
Applications
- Industrial motor drives
- Power supply inverters
- High-frequency switching converters
Procurement Notes
Verify the manufacturer designation as Harris Corporation, noting its historical status prior to corporate mergers. Confirm the specific suffix R3935 matches the required packaging or binning specifications if applicable. Ensure the component status is confirmed as active for current production needs. Cross-reference the 350V rating against system voltage requirements to prevent overvoltage failure. Validate that the bulk packaging aligns with automated assembly processes.
Selection Notes
Select this component when a 350V IGBT with 20A capacity is required for medium-power applications. The integrated fast recovery diode makes it suitable for inductive load switching without external freewheeling diodes. Consider thermal management capabilities based on the 20A rating. Evaluate the switching speed characteristics against electromagnetic interference constraints. Ensure compatibility with gate drive voltages typical for standard IGBT operation.
Part Context
Harris Corporation was a significant provider of electronic components before merging into L3Harris Technologies in 2019. The HGTP20N35F3ULR3935 belongs to the single IGBT product classification. This part represents legacy inventory from the pre-merger era. Understanding the corporate history helps in tracing documentation sources and verifying authenticity of older stock.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Users should consult official replacement guides or contact authorized distributors for equivalent parts with matching electrical ratings.
